Analytical transient response and propagation delay evaluation of the CMOS inverter for short-channel devices

Author

Bisdounis, L. ; Nikolaidis, S. ; Koufopavlou, O.

Author_Institution

Dept. of Electr. & Comput. Eng., Patras Univ., Greece

Volume

33

Issue

2

fYear

1998

fDate

2/1/1998 12:00:00 AM

Firstpage

302

Lastpage

306

Abstract

In this paper an accurate, analytical model for the evaluation of the CMOS inverter transient response and propagation delay for short-channel devices is presented. An exhaustive analysis of the inverter operation is provided which results in accurate expressions of the output response to an input ramp. Most of the factors which influence the inverter operation are taken into account. The α-power law MOS model, which considers the carriers´ velocity saturation effects of short-channel devices, is used. The final results are in excellent agreement with SPICE simulations

Keywords

CMOS logic circuits; MOSFET; SPICE; circuit analysis computing; delays; logic gates; transient analysis; transient response; α-power law MOS model; CMOS inverter; SPICE simulations; analytical transient response; input ramp; output response; propagation delay evaluation; short-channel devices; velocity saturation effects; Circuit simulation; Differential equations; Inverters; Piecewise linear approximation; Propagation delay; SPICE; Semiconductor device modeling; Transient analysis; Transient response; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.658636

Filename

658636