Nonlinear Absorption at Optical Telecommunication Wavelengths of InN Films Deposited by RF Sputtering

Author

Valdueza-Felip, Sirona ; Monteagudo-Lerma, Laura ; Mangeney, Juliette ; González-Herráez, Miguel ; Julien, François H. ; Naranjo, Fernando B.

Author_Institution

INAC, CEA Grenoble, Grenoble, France

Volume

24

Issue

22

fYear

2012

Firstpage

1998

Lastpage

2000

Abstract

We report on the nonlinear optical absorption of InN films deposited on GaN templates by radio-frequency (RF) sputtering. The layers are characterized through the pump-probe technique at 1.55 μm, by obtaining a nonlinear absorption coefficient of 167±30 cm/GW with a nonlinear response recovery time of 380 fs. This nonlinear behavior is attributed to a two-photon absorption process followed by a free carrier absorption by the photogenerated carriers. These results render InN films deposited by RF sputtering particularly suitable for ultrafast all-optical devices based on low-cost technology.

Keywords

absorption; indium compounds; nitrogen compounds; optical communication; sputtering; InN; RF sputtering; free carrier absorption; indium nitride films; nonlinear optical absorption; nonlinear response recovery time; optical telecommunication wavelengths; photogenerated carriers; radio-frequency sputtering; two-photon absorption process; ultrafast all-optical devices; Absorption; Nonlinear optics; Optical films; Optical pumping; Optical reflection; Ultrafast optics; Indium nitride; nonlinear absorption; nonlinear optical devices; pump-probe; sputtering;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2217484

Filename

6323012