Title :
Single- and dual-feedback transimpedance amplifiers implemented by SiGe HBT technology
Author :
Rieh, J.-S. ; Qasaimeh, O. ; Lu, L.-H. ; Yang, K. ; Katehi, L.P.B. ; Bhattacharya, P. ; Croke, E.T.
Author_Institution :
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
fDate :
2/1/1998 12:00:00 AM
Abstract :
Monolithically integrated SiGe/Si heterojunction bipolar transistor (HBT) transimpedance amplifiers, with single- and dual-feedback configurations, have been designed, fabricated, and characterized. The single-feedback amplifier showed transimpedance gain and bandwidth of 45.2 dBΩ and 3.2 GHz, respectively. The dual-feedback version exhibits improved gain and bandwidth of 47.4 dBΩ and 3.3 GHz, respectively. Their performance characteristics are excellent in terms of their application in communication systems
Keywords :
Ge-Si alloys; bipolar analogue integrated circuits; feedback amplifiers; heterojunction bipolar transistors; semiconductor materials; 3.2 GHz; 3.3 GHz; SiGe; SiGe HBT technology; bandwidth; dual-feedback amplifier; fiber optical communication; gain; heterojunction bipolar transistor; monolithic integration; single-feedback amplifier; transimpedance amplifier; Circuits; Dry etching; Fabrication; Germanium silicon alloys; Gold; Heterojunction bipolar transistors; Optical amplifiers; Optical fiber communication; Optical fiber devices; Silicon germanium;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
