Title :
An isolated-open pattern to de-embed pad parasitics [CMOSFETs]
Author :
Kim, Chung-Hwan ; Kim, Cheon Soo ; Yu, Hyun Kyu ; Nam, Kee Soo
Author_Institution :
Semicond. Div., Electron. & Telecommun. Res. Inst., Taejon, South Korea
fDate :
2/1/1998 12:00:00 AM
Abstract :
To meet radio frequency (RF) performance required in large market of wireless applications, CMOS transistors having a small unit gate width are preferred. To correctly estimate RF performance, parasitics of the on-wafer pads and interconnection metal lines should be de-embedded as in the advanced bipolar transistors. However, cutoff frequencies of small-size MOSFETs de-embedded by the conventional on-wafer dummy structures result in large overestimation. A new open pattern is proposed to solve the problem. The meaning and justification of the new de-embedding pattern are discussed
Keywords :
CMOS integrated circuits; MOSFET; UHF field effect transistors; UHF integrated circuits; capacitance; equivalent circuits; integrated circuit interconnections; CMOS transistors; RF performance; interconnection metal lines; isolated-open pattern; on-wafer pads; pad parasitics de-embedding; radiofrequency performance; small-size CMOSFET; wireless applications; Atherosclerosis; CMOS process; Coupling circuits; Cutoff frequency; Equivalent circuits; Integrated circuit interconnections; MOSFETs; Parasitic capacitance; Radio frequency; Transistors;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
