An isolated-open pattern to de-embed pad parasitics [CMOSFETs]

Author

Kim, Chung-Hwan ; Kim, Cheon Soo ; Yu, Hyun Kyu ; Nam, Kee Soo

Author_Institution

Semicond. Div., Electron. & Telecommun. Res. Inst., Taejon, South Korea

Volume

8

Issue

2

fYear

1998

fDate

2/1/1998 12:00:00 AM

Firstpage

96

Lastpage

98

Abstract

To meet radio frequency (RF) performance required in large market of wireless applications, CMOS transistors having a small unit gate width are preferred. To correctly estimate RF performance, parasitics of the on-wafer pads and interconnection metal lines should be de-embedded as in the advanced bipolar transistors. However, cutoff frequencies of small-size MOSFETs de-embedded by the conventional on-wafer dummy structures result in large overestimation. A new open pattern is proposed to solve the problem. The meaning and justification of the new de-embedding pattern are discussed

Keywords

CMOS integrated circuits; MOSFET; UHF field effect transistors; UHF integrated circuits; capacitance; equivalent circuits; integrated circuit interconnections; CMOS transistors; RF performance; interconnection metal lines; isolated-open pattern; on-wafer pads; pad parasitics de-embedding; radiofrequency performance; small-size CMOSFET; wireless applications; Atherosclerosis; CMOS process; Coupling circuits; Cutoff frequency; Equivalent circuits; Integrated circuit interconnections; MOSFETs; Parasitic capacitance; Radio frequency; Transistors;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.658653

Filename

658653