Title :
1.2 V operation power heterojunction FET´s for digital cellular applications
Author :
Yamaguchi, Keiko ; Iwata, Naotaka ; Kuzuhara, Masaaki ; Takayama, Yoichiro
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
fDate :
2/1/1998 12:00:00 AM
Abstract :
This paper describes 950 MHz power performance of 1.2 V drain bias operation n-AlGaAs/InGaAs/n-AlGaAs heterojunction FET´s (HJFET) for personal digital cellular (PDC) applications. The fabricated HJFET with a 0.8-μm long WSi gate exhibited an on-resistance (τ0n) of 2.1Ω·mm and a maximum drain current of 640 mA/mm. Operated at 1.2 V drain bias voltage, the HJFET with gate width of 28.0 mm demonstrated an output power of 30.0 dBm (1.0 W) and a power-added efficiency of 51.5% with an adjacent channel leakage power at 50 kHz off-center frequency of -50.8 dBc. Class A operation analysis, which shows a good coincidence with the measured PDC power performance, revealed that the excellent power performance with the relatively small gate width was due to the low τ0n of the fabricated HJFET
Keywords :
UHF field effect transistors; aluminium compounds; cellular radio; digital radio; gallium arsenide; indium compounds; leakage currents; personal communication networks; power field effect transistors; semiconductor epitaxial layers; 0.8 micron; 1.0 W; 1.2 V; 28 mm; 50 kHz; 51.5 percent; 950 MHz; AlGaAs-InGaAs-AlGaAs; Class A operation analysis; HJFET; III-V semiconductors; adjacent channel leakage power; drain bias operation; gate width; maximum drain current; n-AlGaAs/InGaAs/n-AlGaAs; off-center frequency; on-resistance; output power; personal digital cellular applications; power heterojunction FET; power-added efficiency; Batteries; Cellular phones; FETs; Heterojunctions; Indium gallium arsenide; Knee; Low voltage; National electric code; Performance analysis; Power generation;
Journal_Title :
Electron Devices, IEEE Transactions on
