Title :
Multiple negative-differential-resistance (MNDR) phenomena of a metal-insulator-semiconductor-insulator-metal (MISIM)-like structure with step-compositioned InxGa1-xAs quantum wells
Author :
Liu, Wen-Chau ; Laih, Lih-Wen ; Cheng, Shiou-Ying ; Chang, Wen-Lung ; Wang, Wei-Chou ; Chen, Jing-Yuh ; Lin, Po-Hung
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
2/1/1998 12:00:00 AM
Abstract :
In this paper, a new multiple negative-differential-resistance (MNDR) device based on a metal-insulator-semiconductor-insulator-metal (MISIM)-like structure with step-compositional InxGa1-x As quantum wells has been fabricated and demonstrated. The interesting MNDR phenomena are found in the current-voltage (I-V) characteristics of this device. At room temperature, the triple switching behaviours and quadruple stable operation states are obtained. In addition, the sixfold switching behaviors and a staircase-shaped I-V characteristic are observed at -105°C. A sequential carrier accumulation at InGaAs subwells and the potential lowering process are used to qualitatively explain the interesting MNDR phenomena. From the experimental results, it is shown that the studied device has good potential in multiple-valued logic applications
Keywords :
III-V semiconductors; MIS devices; characteristics measurement; gallium arsenide; indium compounds; multivalued logic; negative resistance devices; semiconductor quantum wells; semiconductor switches; -105 degC; InGaAs; current-voltage characteristics; metal-insulator-semiconductor-insulator-metal-like structure; multiple negative-differential-resistance phenomena; multiple-valued logic applications; potential lowering process; quadruple stable operation states; sequential carrier accumulation; sixfold switching behaviors; staircase-shaped I-V characteristic; step-compositional quantum wells; triple switching behaviours; Anodes; Cathodes; Complexity theory; Indium gallium arsenide; Inorganic materials; Laboratories; Logic devices; Metal-insulator structures; Molecular beam epitaxial growth; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
