Title :
Poly-Si/poly-SiCx heterojunction thin-film transistors
Author :
Choi, Kwangsoo ; Matsumura, Masakiyo
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fDate :
2/1/1998 12:00:00 AM
Abstract :
We have proposed heterojunction thin-film transistors having a stacked structure of poly-crystal silicon-carbon (SiCx) and Si thin films, both of which are prepared by an excimer-laser crystallization method. A Si/SiCx interface after intense excimer-laser irradiation for crystallization, was as abrupt as that of the as-deposited and amorphous structure. The device had a relatively high mobility of about 4 cm2/Vs and a sufficiently low leakage current of an order of 10-14 A/μm even under intense light illumination conditions
Keywords :
MISFET; carrier mobility; elemental semiconductors; field effect transistor switches; leakage currents; silicon; silicon compounds; thin film transistors; wide band gap semiconductors; Si thin films; Si-SiC-Si-SiN; excimer-laser crystallization method; heterojunction thin-film transistors; intense light illumination conditions; low leakage current; mobility; poly-Si/poly-SiCx heterojunction TFT; polysilicon films; stacked structure; Amorphous materials; Crystallization; Heterojunctions; Leakage current; Lighting; Liquid crystal displays; Semiconductor thin films; Silicon carbide; Thin film transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
