Title :
A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown
Author :
Degraeve, R. ; Ogier, J.L. ; Bellens, R. ; Roussel, P.J. ; Groeseneken, G. ; Maes, H.E.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
2/1/1998 12:00:00 AM
Abstract :
The field acceleration of intrinsic and extrinsic breakdown is studied. For the intrinsic mode an exp(1/E)-acceleration law is found, while for the extrinsic mode an new exp (E)-acceleration law for QBD is proposed. This field acceleration model is implemented in a maximum likelihood algorithm together with a new analytical expression for fitting competing Weibull distributions. With this algorithm an extensive tBD-data set measured at different stress conditions can be fitted excellently in one single calculation. From the result, predictions of low-field oxide reliability are made and the screening conditions in order to guarantee a pre-set reliability specification are calculated
Keywords :
MOS integrated circuits; Weibull distribution; electric breakdown; integrated circuit modelling; integrated circuit reliability; maximum likelihood estimation; IC reliability; MOS ICs; competing Weibull distributions; dielectric thin films; extrinsic mode; field acceleration model; field dependence; intrinsic mode; low-field oxide reliability; maximum likelihood algorithm; pre-set reliability specification; screening conditions; stress conditions; time-dependent dielectric breakdown; Acceleration; Algorithm design and analysis; Capacitors; Dielectric breakdown; Dielectric measurements; Electric breakdown; Integrated circuit reliability; Telecommunications; Temperature; Weibull distribution;
Journal_Title :
Electron Devices, IEEE Transactions on
