A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

Author

Degraeve, R. ; Ogier, J.L. ; Bellens, R. ; Roussel, P.J. ; Groeseneken, G. ; Maes, H.E.

Author_Institution

IMEC, Leuven, Belgium

Volume

45

Issue

2

fYear

1998

fDate

2/1/1998 12:00:00 AM

Firstpage

472

Lastpage

481

Abstract

The field acceleration of intrinsic and extrinsic breakdown is studied. For the intrinsic mode an exp(1/E)-acceleration law is found, while for the extrinsic mode an new exp (E)-acceleration law for Q_BD is proposed. This field acceleration model is implemented in a maximum likelihood algorithm together with a new analytical expression for fitting competing Weibull distributions. With this algorithm an extensive t_BD-data set measured at different stress conditions can be fitted excellently in one single calculation. From the result, predictions of low-field oxide reliability are made and the screening conditions in order to guarantee a pre-set reliability specification are calculated

Keywords

MOS integrated circuits; Weibull distribution; electric breakdown; integrated circuit modelling; integrated circuit reliability; maximum likelihood estimation; IC reliability; MOS ICs; competing Weibull distributions; dielectric thin films; extrinsic mode; field acceleration model; field dependence; intrinsic mode; low-field oxide reliability; maximum likelihood algorithm; pre-set reliability specification; screening conditions; stress conditions; time-dependent dielectric breakdown; Acceleration; Algorithm design and analysis; Capacitors; Dielectric breakdown; Dielectric measurements; Electric breakdown; Integrated circuit reliability; Telecommunications; Temperature; Weibull distribution;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.658683

Filename

658683