Title :
A new 2-D model for operating point shift in large LWIR HgCdTe FPA´s
Author :
Dhar, Vikram ; Bhan, R.K. ; Ashokan, R.
Author_Institution :
Solid State Phys. Lab., Delhi, India
fDate :
2/1/1998 12:00:00 AM
Abstract :
Infrared focal plane arrays (IRFPAs) are rapidly increasing in size. It is shown here that for large FPAs a considerable shift in the operating point occurs, which, if not reduced, introduces unacceptably large nonuniformity in the array response. This shift results because of the variable voltage drop across the HgCdTe active layer, due to its finite distributed resistance. A new analytical two-dimensional (2-D) model to estimate the operating point shift of individual detectors of long wavelength infrared (LWIR) HgCdTe focal plane array (FPA) is presented. Avoiding this operating point shift requires an optimized grid pattern
Keywords :
II-VI semiconductors; cadmium compounds; focal planes; infrared imaging; mercury compounds; semiconductor device models; 2D model; HgCdTe; IRFPA; LWIR; active layer; array response; finite distributed resistance; focal plane arrays; long wavelength infrared; nonuniformity; operating point shift; optimized grid pattern; variable voltage drop; Analytical models; Cadmium compounds; Contact resistance; Crosstalk; Diodes; Infrared detectors; Photovoltaic cells; Sensor arrays; Two dimensional displays; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
