A new 2-D model for operating point shift in large LWIR HgCdTe FPA´s

Author

Dhar, Vikram ; Bhan, R.K. ; Ashokan, R.

Author_Institution

Solid State Phys. Lab., Delhi, India

Volume

45

Issue

2

fYear

1998

fDate

2/1/1998 12:00:00 AM

Firstpage

487

Lastpage

493

Abstract

Infrared focal plane arrays (IRFPAs) are rapidly increasing in size. It is shown here that for large FPAs a considerable shift in the operating point occurs, which, if not reduced, introduces unacceptably large nonuniformity in the array response. This shift results because of the variable voltage drop across the HgCdTe active layer, due to its finite distributed resistance. A new analytical two-dimensional (2-D) model to estimate the operating point shift of individual detectors of long wavelength infrared (LWIR) HgCdTe focal plane array (FPA) is presented. Avoiding this operating point shift requires an optimized grid pattern

Keywords

II-VI semiconductors; cadmium compounds; focal planes; infrared imaging; mercury compounds; semiconductor device models; 2D model; HgCdTe; IRFPA; LWIR; active layer; array response; finite distributed resistance; focal plane arrays; long wavelength infrared; nonuniformity; operating point shift; optimized grid pattern; variable voltage drop; Analytical models; Cadmium compounds; Contact resistance; Crosstalk; Diodes; Infrared detectors; Photovoltaic cells; Sensor arrays; Two dimensional displays; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.658685

Filename

658685