DocumentCode :
1306544
Title :
Correlation of stress-induced leakage current with generated positive trapped charges for ultrathin gate oxide
Author :
Lin, Yung Hao ; Lee, Chung Len ; Lei, Tan Fu
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
45
Issue :
2
fYear :
1998
fDate :
2/1/1998 12:00:00 AM
Firstpage :
567
Lastpage :
570
Abstract :
In this work, the evidence of the stress-induced leakage current related to the stress-generated positive trapped charges is presented and investigated. It is shown that the centroid of the positive trapped charges, which depends on the polarity of the stress current, affects the magnitude of the leakage current. The trapping density of positive charges, which is determined by the final stress applied on the oxide, determines the final level of the leakage currents
Keywords :
MOS capacitors; MOSFET; hole traps; internal stresses; leakage currents; MOS capacitors; MOSFETs; final stress; positive trapped charges; stress-induced leakage current; trapping density; ultrathin gate oxide; Anisotropic magnetoresistance; Electron traps; Leakage current; MOS devices; MOSFETs; Nitrogen; Silicon carbide; Stress; Temperature measurement; Tunneling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.658697
Filename :
658697
Link To Document :
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