DocumentCode
1306563
Title
Zone-melting-recrystallization silicon-on-insulator technology
Author
Tsaur, Bor-Yeu
Author_Institution
Lincoln Lab., MIT, Cambridge, MA, USA
Volume
3
Issue
4
fYear
1987
fDate
7/1/1987 12:00:00 AM
Firstpage
12
Lastpage
16
Abstract
Continuing reduction in feature size and increase in the number of components per chip have been basic trends in the evolution of Si integrated circuits (ICs). The minimum feature size in commercial VLSI chips is currently about 1 μm, and the number of components per chip is about one million. The years approaching 1990 will see the introduction of submicrometer feature sizes and multimillion-com-ponent chips. As device dimensions and device separations shrink below 1 μm, a new device isolation technique will be required to prevent parasitic coupling between adjacent devices through the Si substrate.
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/MCD.1987.6323127
Filename
6323127
Link To Document