Title :
Long wavelength infra-red photoconductive InAsSb detectors grown in Si wells by molecular beam epitaxy
Author :
Dobbelaere, Wim ; De Boeck, Jo ; Van Hove, Marleen ; Deneffe, K. ; De Raedt, W. ; Mertens, Robert ; Borghs, G.
Author_Institution :
Interuniv. Micro-Electron. Center, Leuven, Belgium
Abstract :
InAs0.05Sb0.95 photoconductive infra-red detectors have been grown by molecular beam epitaxy in recessed Si wells. The embedded devices exhibited a voltage responsivity of 420 V/W at 77 K and 300 meV photon energy with a load resistor of 100 Omega and a bias voltage of 1.5 V.
Keywords :
III-V semiconductors; indium antimonide; indium compounds; infrared detectors; molecular beam epitaxial growth; photoconducting devices; semiconductor growth; 1.5 V; 100 ohm; 300 meV; 77 K; Si wells; bias voltage; load resistor; long wavelength IR detectors; molecular beam epitaxy; photoconductive InAsSb detectors; photon energy; voltage responsivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900173
