DocumentCode :
1306577
Title :
Bilayer Graphene System: Current-Induced Reliability Limit
Author :
Yu, Tianhua ; Lee, Eun-Kyu ; Briggs, Benjamin ; Nagabhirava, Bhaskar ; Yu, Bin
Author_Institution :
Coll. of Nanoscale Sci. & Eng., State Univ. of New York, Albany, NY, USA
Volume :
31
Issue :
10
fYear :
2010
Firstpage :
1155
Lastpage :
1157
Abstract :
We investigate the key reliability limiting factors of bilayer graphene (BLG) under current stressing by examining the breakdown characteristics of BLG with chemical-mechanical planarization copper contacts. It is observed that dc current-induced thermal annealing helps to reduce the BLG-to-Cu contact resistance. Breakdown occurs with two noticeably different failure modes depending on local stressing current level, while copper contact damage dominates in scaled structure. The measured linear dependence of breakdown current on graphene width/length aspect ratio suggests Joule heating as the primary breakdown mechanism.
Keywords :
annealing; contact resistance; copper; electric breakdown; graphene; metal-insulator boundaries; BLG-to-Cu contact resistance; C-Cu; Joule heating; bilayer graphene; breakdown characteristics; chemical-mechanical planarization; dc current-induced thermal annealing; graphene width-length aspect ratio; local stressing current level; Annealing; Copper; Current density; Electric breakdown; Heating; Resistance; Bilayer graphene (BLG); breakdown; maximum current density; reliability;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2058994
Filename :
5559331
Link To Document :
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