• DocumentCode
    1306577
  • Title

    Bilayer Graphene System: Current-Induced Reliability Limit

  • Author

    Yu, Tianhua ; Lee, Eun-Kyu ; Briggs, Benjamin ; Nagabhirava, Bhaskar ; Yu, Bin

  • Author_Institution
    Coll. of Nanoscale Sci. & Eng., State Univ. of New York, Albany, NY, USA
  • Volume
    31
  • Issue
    10
  • fYear
    2010
  • Firstpage
    1155
  • Lastpage
    1157
  • Abstract
    We investigate the key reliability limiting factors of bilayer graphene (BLG) under current stressing by examining the breakdown characteristics of BLG with chemical-mechanical planarization copper contacts. It is observed that dc current-induced thermal annealing helps to reduce the BLG-to-Cu contact resistance. Breakdown occurs with two noticeably different failure modes depending on local stressing current level, while copper contact damage dominates in scaled structure. The measured linear dependence of breakdown current on graphene width/length aspect ratio suggests Joule heating as the primary breakdown mechanism.
  • Keywords
    annealing; contact resistance; copper; electric breakdown; graphene; metal-insulator boundaries; BLG-to-Cu contact resistance; C-Cu; Joule heating; bilayer graphene; breakdown characteristics; chemical-mechanical planarization; dc current-induced thermal annealing; graphene width-length aspect ratio; local stressing current level; Annealing; Copper; Current density; Electric breakdown; Heating; Resistance; Bilayer graphene (BLG); breakdown; maximum current density; reliability;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2058994
  • Filename
    5559331