DocumentCode
1306577
Title
Bilayer Graphene System: Current-Induced Reliability Limit
Author
Yu, Tianhua ; Lee, Eun-Kyu ; Briggs, Benjamin ; Nagabhirava, Bhaskar ; Yu, Bin
Author_Institution
Coll. of Nanoscale Sci. & Eng., State Univ. of New York, Albany, NY, USA
Volume
31
Issue
10
fYear
2010
Firstpage
1155
Lastpage
1157
Abstract
We investigate the key reliability limiting factors of bilayer graphene (BLG) under current stressing by examining the breakdown characteristics of BLG with chemical-mechanical planarization copper contacts. It is observed that dc current-induced thermal annealing helps to reduce the BLG-to-Cu contact resistance. Breakdown occurs with two noticeably different failure modes depending on local stressing current level, while copper contact damage dominates in scaled structure. The measured linear dependence of breakdown current on graphene width/length aspect ratio suggests Joule heating as the primary breakdown mechanism.
Keywords
annealing; contact resistance; copper; electric breakdown; graphene; metal-insulator boundaries; BLG-to-Cu contact resistance; C-Cu; Joule heating; bilayer graphene; breakdown characteristics; chemical-mechanical planarization; dc current-induced thermal annealing; graphene width-length aspect ratio; local stressing current level; Annealing; Copper; Current density; Electric breakdown; Heating; Resistance; Bilayer graphene (BLG); breakdown; maximum current density; reliability;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2058994
Filename
5559331
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