Title :
New generation MMIC amplifier using InGaAs/InAlAs HEMTs
Author :
Weiss, Michael ; Ng, G.I. ; Pavlidis, Dimitris
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
An InP based monolithic integrated technology has been developed using InGaAs/InAlAs HEMTs and is applied for the first time to the realisation of a two-stage amplifier. The gain has a peak of 18.4 dB at 6.4 GHz and exceeds 15 dB from 6.0 to 9.5 GHz.
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; microwave amplifiers; 15 dB; 18.4 dB; 6.0 to 9.5 GHz; 6.4 GHz; HEMTs; InGaAs-InAlAs; InP based monolithic integrated technology; new generation MMIC amplifier; two-stage amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900176
