Title :
LD optical switch with polarization insensitivity over a wide wavelength range
Author :
Takeshita, Tatsuya ; Yoshino, Kaoru ; Ito, Toshio ; Lui, Wayne W. ; Okamoto, Minoru ; Kondo, Yasuhiro ; Kishi, Kenji ; Tamamura, Toshiaki ; Suzuki, Yasuhiro ; Magari, Katsuaki ; Yamamoto, Mitsuo ; Naganuma, Mitsuru
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
2/1/1998 12:00:00 AM
Abstract :
A double-heterostructure (DH) laser with TM mode lasing has been achieved with a narrow active-layer width, and a laser-diode optical switch (LDSW) module with less than a 0.35-dB gain difference between the TE and TM modes over a wide wavelength range has been constructed by introducing a square bulk active layer formed by dry etching and regrowth. The polarization-insensitive width of a 0.3-μm-thick DH laser is clarified to be between 0.30 and 0.35 μm, since the 0.30- and 0.35-μm-wide DH lasers lase in the TM mode and TE mode, respectively. The polarization-insensitive width of the fabricated 0.3-μm-thick LDSW is estimated to be about 0.32 μm for the fabricated LDSW with a trapezoidal active layer by measuring the single-pass gain and the gain difference between the TE and TM modes. This must be to within 0.01 μm. A 0.35-μm-wide, 300-μm-long LDSW module has lossless gain in the wavelength range of 1.31 to 1.36 μm at 20 mA. The gain difference between the TE and TM modes is as low as 0.35 dB, The rise and fall times are 1.0 and 0.55 ns, respectively. The bulk active-layer LDSW module is promising for use as a polarization-insensitive optical-gate switch in optical information systems
Keywords :
electro-optical switches; etching; laser modes; light polarisation; optical fabrication; semiconductor growth; semiconductor lasers; semiconductor switches; sensitivity; 0.3 mum; 0.35 dB; 0.35 mum; 0.55 ns; 1 ns; 1.31 to 1.36 mum; 20 mA; LD optical switch; TE modes; TM mode lasing; double-heterostructure laser; dry etching; gain difference; laser-diode optical switch; lossless gain; narrow active-layer width; optical information systems; polarization insensitivity; polarization-insensitive optical-gate switch; regrowth; square bulk active layer; trapezoidal active layer; wide wavelength range; DH-HEMTs; Fiber lasers; Gain measurement; Indium tin oxide; Laser modes; Optical fiber polarization; Optical polarization; Optical switches; Semiconductor lasers; Tellurium;
Journal_Title :
Quantum Electronics, IEEE Journal of