Title :
Room temperature observation of mid-infrared inter-subband absorption activated by near-infrared illumination in multiple quantum wells
Author :
Delacourt, D. ; Papillon, D. ; Pocholle, J.P. ; Schnell, J.P. ; Papuchon, M.
Author_Institution :
Thomson-CSF/LCR, Domaine de Corbeville, Orsay, France
fDate :
3/1/1990 12:00:00 AM
Abstract :
The authors report the near-infrared optical activation of inter-subband transitions in a 250 period GaAs/Ga0.75Al0.25As multiple quantum well structure free from intentional doping (undoped). A 0.5% resonant absorption peak around 10.2 mu m has been observed at room temperature under a 320 W/cm2 near-infrared illumination at 0.835 mu m.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared spectra of inorganic solids; optical properties of substances; semiconductor quantum wells; 0.835 micron; 10.2 micron; GaAs-Ga 0.75Al 0.25As multiple quantum well structure; III-V semiconductor; IR spectra; MQW; mid-infrared inter-subband absorption; multiple quantum wells; near-infrared illumination; near-infrared optical activation; resonant absorption peak; room temperature; undoped;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900184
