DocumentCode
1306737
Title
Characterisation and comparison of failure modes in III-V avalanche photodiodes
Author
Putland, P.A.
Author_Institution
British Telecom Res. Labs., Ipswich, UK
Volume
26
Issue
5
fYear
1990
fDate
3/1/1990 12:00:00 AM
Firstpage
298
Lastpage
300
Abstract
To determine the reliability of III-V avalanche photodiodes, (APDs) for use in future telecommunications systems, devices from two commercial sources were characterised and subjected to thermally accelerated lifetests. A variety of nondestructive characterisation techniques were applied to unstressed and failed APDs. Results showed that the devices from one source failed by local avalanche breakdown in the InP capping layer, whereas devices from the other source had increases of unmultiplied dark current.
Keywords
III-V semiconductors; avalanche photodiodes; failure analysis; life testing; reliability; semiconductor device testing; III-V avalanche photodiodes; InP capping layer; failed APDs; failure modes; future telecommunications systems; local avalanche breakdown; nondestructive characterisation techniques; reliability; semiconductors; thermally accelerated lifetests; unmultiplied dark current; unstressed APD;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900197
Filename
82623
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