Title :
Electron detrapping enhanced by electric field in AlGaAs/GaAs HEMTs
Author :
Canali, Carlo ; Tedesco, C. ; Zanoni, Enrico ; Magistrali, F. ; Sangalli, M.
Author_Institution :
Dipartimento di Elettronica ed Inf., Padova Univ., Italy
fDate :
3/1/1990 12:00:00 AM
Abstract :
A remarkable enhancement by electric field of the detrapping time of electrons from deep donor levels, probably associated with DX centres in the AlGaAs layer, has been directly observed at room temperature in an AlGaAs/GaAs HEMT, whose performance results show to be a function of bias conditions. In particular, detrapping time decreases by one order of magnitude on increasing VDS from 0.5 V to 5 V, moving device response from the linear to the strongly saturated region.
Keywords :
III-V semiconductors; aluminium compounds; deep levels; electric field effects; electron traps; gallium arsenide; high electron mobility transistors; 0.5 to 5 V; AlGaAs-GaAs high electron mobility transistor; DX centres; HEMT; III-V semiconductors; bias conditions; deep donor levels; detrapping time; device response; electric field; electron detrapping enhancement; linear region; performance results; room temperature; saturated region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900206
