DocumentCode
1306889
Title
Polarization mode filter in GaAs-AlAs superlattice fabricated by SiO/sub 2/ cap disordering
Author
Suzuki, Yasuhiro ; Iwamura, Hidetoshi ; Mikami, Osamu
Author_Institution
NTT Opto-Electron. Lab., Kanagawa, Japan
Volume
2
Issue
11
fYear
1990
Firstpage
818
Lastpage
819
Abstract
Novel TE-mode and TM-mode filters in GaAs-AlAs superlattice are proposed and fabricated by SiO/sub 2/ cap disordering. The structure consists of mode-selective channel waveguides with bending regions. Functions of mode filters are confirmed by observing near-field patterns, yielding an extinction ratio of 14 dB at 1.15 mu m wavelength.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; optical filters; optical polarisers; optical waveguides; semiconductor superlattices; 1.15 micron; GaAs-AlAs superlattice; III-V semiconductors; SiO/sub 2/ cap disordering; bending regions; extinction ratio; mode-selective channel waveguides; near-field patterns; polarization mode filter; transverse electric mode filters; transverse magnetic mode filters; wavelength; Annealing; Optical devices; Optical filters; Optical waveguides; Polarization; Refractive index; Semiconductor waveguides; Superlattices; Wavelength measurement;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.63232
Filename
63232
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