DocumentCode :
1306928
Title :
Dual-Input Pseudo-Switch RF Low Noise Amplifier
Author :
Zito, Domenico ; Fonte, Alessandro
Author_Institution :
Univ. Coll. Cork, Cork, Ireland
Volume :
57
Issue :
9
fYear :
2010
Firstpage :
661
Lastpage :
665
Abstract :
A dual-input low noise amplifier (DILNA) topology with pseudo-switch capability is presented. This novel solution allows us to avoid the use of the RF switch in all cases in which the LNA input has to be switched alternatively between two different RF sources. This is obtained by duplicating the input stage of the LNA and creating two concurrent stages. In the particular case of 13-GHz radiometric applications, the DILNA circuit has been realized in 90-nm CMOS technology, and the measurement results have shown a noise figure of 2.5 dB, a power gain close to 19 dB from both inputs, an input-output isolation close to -60 dB, and an isolation between the two inputs of about -45 dB at 13 GHz. The power consumption amounts to 17.38 mW from a 1.1-V supply voltage. These results represent one of the best sets of performance among those presented in the literature.
Keywords :
CMOS integrated circuits; low noise amplifiers; radiofrequency amplifiers; radiometry; CMOS technology; dual-input pseudo-switch RF low noise amplifier; frequency 13 GHz; input-output isolation; noise figure 2.5 dB; power 17.38 mW; radiometers; size 90 nm; voltage 1.1 V; Impedance; Microwave radiometry; Noise; Noise measurement; Radio frequency; Receivers; Switches; Complementary metal–oxide–semiconductor (CMOS); dual input; low noise amplifier (LNA); radio-frequency (RF) switch; receiver; system-on-chip radiometer; temperature sensor;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2010.2058491
Filename :
5559382
Link To Document :
بازگشت