Title :
An improved MOSFET model for circuit simulation
Author :
Joardar, Kuntal ; Gullapalli, Kiran Kumar ; McAndrew, Colin C. ; Burnham, Marie Elizabeth ; Wild, Andreas
Author_Institution :
Semicond. Products Sector, Motorola Inc., Mesa, AZ, USA
fDate :
1/1/1998 12:00:00 AM
Abstract :
Problems that have continued to remain in some of the recently published MOSFET compact models are demonstrated in this paper. Of particular interest are discontinuities observed in these models at the boundary between forward and reverse mode operation. A new MOSFET model is presented that overcomes the errors present in state-of-the-art models. Comparison with measured data is also presented to validate the new model
Keywords :
MOSFET; circuit analysis computing; semiconductor device models; MOSFET model; circuit simulation; discontinuities; forward mode; reverse mode; Analog circuits; Capacitance-voltage characteristics; Circuit simulation; Displays; Geometry; MOSFET circuits; Physics; SPICE; Smoothing methods; Solid modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
