Title :
Two-dimensional effects in titanium silicidation
Author :
Kao, Dah-bin ; Manley, Martin ; Blair, Chris ; Scott, Gregory ; Chung, Henry W M ; Brown, Kevin ; Narahari, Nara ; Myers, Edward R. ; Shyu, Chin-Miin
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
fDate :
1/1/1998 12:00:00 AM
Abstract :
New experimental results are reported on the two-dimensional (2-D) effects associated with titanium silicidation on small and nonuniform structures. Based on a unique set of test structures, new insight into the silicidation process is obtained. Small geometry by itself does not seem to be restraining silicide formation. Thick silicide is demonstrated to form on the vertical surface of silicon posts of 1000 Å radius and on top of 1200 Å wide silicon lines. Also discussed are the possible roles of mechanical stress and the Si-SiO2 interface in the 2-D silicidation and diffusion processes. The original data presented here will be useful in further analysis and simulation of 2-D silicidation process
Keywords :
CMOS integrated circuits; diffusion; integrated circuit metallisation; titanium compounds; 1000 A; 1200 A; 2D effects; 2D silicidation process; Si lines; Si posts; Si-SiO2; Si/SiO2 interface; Ti silicidation; TiSi2-Si; diffusion processes; mechanical stress; nonuniform structures; salicide; self-aligned silicide; test structures; two-dimensional effects; Analytical models; Diffusion processes; Geometry; Silicidation; Silicides; Silicon; Stress; Testing; Titanium; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
