Two-dimensional effects in titanium silicidation

Author

Kao, Dah-bin ; Manley, Martin ; Blair, Chris ; Scott, Gregory ; Chung, Henry W M ; Brown, Kevin ; Narahari, Nara ; Myers, Edward R. ; Shyu, Chin-Miin

Author_Institution

Nat. Semicond. Corp., Santa Clara, CA, USA

Volume

45

Issue

1

fYear

1998

fDate

1/1/1998 12:00:00 AM

Firstpage

187

Lastpage

193

Abstract

New experimental results are reported on the two-dimensional (2-D) effects associated with titanium silicidation on small and nonuniform structures. Based on a unique set of test structures, new insight into the silicidation process is obtained. Small geometry by itself does not seem to be restraining silicide formation. Thick silicide is demonstrated to form on the vertical surface of silicon posts of 1000 Å radius and on top of 1200 Å wide silicon lines. Also discussed are the possible roles of mechanical stress and the Si-SiO₂ interface in the 2-D silicidation and diffusion processes. The original data presented here will be useful in further analysis and simulation of 2-D silicidation process

Keywords

CMOS integrated circuits; diffusion; integrated circuit metallisation; titanium compounds; 1000 A; 1200 A; 2D effects; 2D silicidation process; Si lines; Si posts; Si-SiO₂; Si/SiO₂ interface; Ti silicidation; TiSi₂-Si; diffusion processes; mechanical stress; nonuniform structures; salicide; self-aligned silicide; test structures; two-dimensional effects; Analytical models; Diffusion processes; Geometry; Silicidation; Silicides; Silicon; Stress; Testing; Titanium; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.658829

Filename

658829