A Source-Side Injection Lucky Electron Model for Schottky Barrier Metal–Oxide–Semiconductor Devices

Author

Chun-Hsing Shih ; Ji-Ting Liang ; Jhong-Sheng Wang ; Nguyen Dang Chien

Author_Institution

Dept. of Electr. Eng., Nat. Chi Nan Univ., Nantou, Taiwan

Volume

32

Issue

10

fYear

2011

Firstpage

1331

Lastpage

1333

Abstract

This letter explores source-side injection in Schottky barrier metal-oxide-semiconductor (MOS) devices. Unlike drain-side injection in conventional MOS devices, a source-side lucky electron model predicts the specific source-side injection in Schottky barrier MOS devices. The source-side electric field is derived from the solutions of 2-D Poisson´s equations. The conformal-mapping method is used to estimate the gate electrode contribution to determine the source-side injected probability. 2-D device simulations confirm the agreements between the analytical models and the numerical results. This study provides a physical understanding of enhanced source-side injection in new Schottky barrier nonvolatile memory.

Keywords

MIS devices; Poisson equation; Schottky barriers; 2D Poisson equations; 2D device simulation; Schottky barrier MOS devices; Schottky barrier metal-oxide-semiconductor devices; Schottky barrier nonvolatile memory; conformal mapping method; drain-side injection; gate electrode contribution; source-side electric field; source-side injected probability; source-side injection lucky electron model; Electric potential; Logic gates; MOS devices; Mathematical model; Poisson equations; Schottky barriers; Silicon; Lucky electron model; Schottky barrier; metal–oxide–semiconductor (MOS); source-side injection;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2162577

Filename

5999698