DocumentCode :
1307429
Title :
High-Performance Pentacene Thin-Film Transistors Fabricated by Printing Technology
Author :
Changhun Yun ; Minseok Kim ; Seung Won Lee ; Hanul Moon ; Sunmin Park ; Jae Bon Koo ; Jeong Won Kim ; In-Kyu You ; Seunghyup Yoo
Author_Institution :
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
Volume :
32
Issue :
10
fYear :
2011
Firstpage :
1454
Lastpage :
1456
Abstract :
A high-performance bottom-contact pentacene thin-film transistor (TFT) is realized with its channel and electrodes fabricated by a simple printing process. By applying reverse offset printing of a nanosilver paste ink to the source/drain electrodes and organic vapor-jet printing to the thin pentacene layer, TFTs with a channel length of 20 μm are realized in a precise yet relatively simple fashion. The oxide formed during the processing of the silver ink is shown to help reduce the injection barrier between the source and pentacene, making it possible to realize high-performance bottom-contact TFTs without special treatment for the electrodes.
Keywords :
printing; thin film transistors; bottom-contact pentacene thin-film transistor; injection barrier reduction; nanosilver paste ink; organic vapor-jet printing; reverse offset printing; size 20 mum; source-drain electrodes; Electrodes; Ink; Organic thin film transistors; Pentacene; Printing; Organic thin-film transistor (OTFT); organic vapor-jet printing (OVJP); pentacene; printed electronics; reverse offset printing (ROP);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2162483
Filename :
5999699
Link To Document :
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