Bilayer Graphene/Copper Hybrid On-Chip Interconnect: A Reliability Study

Author

Yu, Tianhua ; Lee, Eun-Kyu ; Briggs, Benjamin ; Nagabhirava, Bhaskar ; Yu, Bin

Author_Institution

Coll. of Nanoscale Sci. & Eng., State Univ. of New York, Albany, NY, USA

Volume

10

Issue

4

fYear

2011

fDate

7/1/2011 12:00:00 AM

Firstpage

710

Lastpage

714

Abstract

In this paper, we investigate key reliability limiting factors of bilayer graphene (BLG)/copper hybrid interconnect system by examining its current-induced breakdown behavior and BLG/Cu contact. The results show that BLG displays an impressive current-carrying capacity (~100 times that of Cu), and dc current-induced thermal annealing helps to significantly reduce the BLG/Cu contact resistance. Breakdown occurs with two different failure modes depending on stressing current density in each material subsystem, while contact damage dominates in scaled structure. The observed linear dependence of breakdown current on graphene geometry aspect ratio suggests Joule heating as the primary breakdown mechanism in graphene.

Keywords

annealing; chemical interdiffusion; contact resistance; copper; current density; electric breakdown; grain boundary diffusion; graphene; interconnections; surface diffusion; C-Cu; DC current-induced thermal annealing; Joule heating; bilayer graphene; contact resistance; copper hybrid on-chip interconnect; current density; current-carrying capacity; current-induced breakdown; failure modes; grain-boundary diffusion; interface diffusion; Annealing; Copper; Current density; Electric breakdown; Electromigration; Integrated circuit interconnections; Wire; Bilayer graphene (BLG); breakdown; current annealing; interconnect; reliability;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2010.2071395

Filename

5559457