Title :
Extension of the collector charge description for compact bipolar epilayer models
Author :
De Vreede, Leo C N ; De Graaff, Henk C. ; Tauritz, Joseph L. ; Baets, Roel G F
Author_Institution :
Inst. of Microelectron. & Submicron Technol., Delft Univ. of Technol., Netherlands
fDate :
1/1/1998 12:00:00 AM
Abstract :
In this paper, an extension to the collector charge description for compact bipolar epilayer models is presented. With this extension, monotonic fT and Early-voltage behavior is ensured when transistor operation extends into the quasi-saturation region. The modification leads to a major improvement in the modeling of nonlinear distortion at high current levels and high frequencies
Keywords :
bipolar transistors; doping profiles; electric distortion; semiconductor device models; semiconductor doping; Early-voltage behavior; bipolar transistors; collector charge description; compact bipolar epilayer models; current levels; nonlinear distortion; quasi-saturation region; transistor operation; Bipolar transistors; Charge carriers; Circuits; Critical current density; Frequency; Hot carriers; Microwave technology; Nonlinear distortion; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
