• DocumentCode
    1307518
  • Title

    Impact of transit-time and capture effects on high-frequency performance of multiple quantum-well infrared photodetectors

  • Author

    Ryzhii, Victor ; Khmyrova, Irina ; Ryzhii, Maxim

  • Author_Institution
    Dept. of Comput. Hardware, Aizu Univ., Japan
  • Volume
    45
  • Issue
    1
  • fYear
    1998
  • fDate
    1/1/1998 12:00:00 AM
  • Firstpage
    293
  • Lastpage
    298
  • Abstract
    An analytical model of multiple quantum-well photodetectors (QWIP´s) is proposed and used to evaluate their high-frequency performance. The model accounts for the electron photoexcitation from the QW´s, capture into them and drift of the photoexcited electrons across the barriers. The frequency-dependent responsivity and the gain-bandwidth efficiency are derived as functions of the QWIP parameters. It is shown that the responsivity roll-off and 3 dB bandwidth are determined by the electron transit-time and capture effects, so that the main factors limiting the QWIP high-frequency performance are the number of the QW´s and the rate of the electron capture into them. It is predicted that the gain-bandwidth efficiency weakly depends on the number of the QW´s and capture parameter
  • Keywords
    electron traps; infrared detectors; photodetectors; semiconductor device models; semiconductor quantum wells; 3 dB bandwidth; QWIP; capture effects; electron capture; electron photoexcitation; frequency-dependent responsivity; gain-bandwidth efficiency; multiple quantum-well infrared photodetectors; photoexcited electrons; responsivity roll-off; transit-time effects; Analytical models; Bandwidth; Detectors; Electron emission; Frequency modulation; Photoconductivity; Photodetectors; Quantum well devices; Radioactive decay; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.658844
  • Filename
    658844