Title :
Impact of transit-time and capture effects on high-frequency performance of multiple quantum-well infrared photodetectors
Author :
Ryzhii, Victor ; Khmyrova, Irina ; Ryzhii, Maxim
Author_Institution :
Dept. of Comput. Hardware, Aizu Univ., Japan
fDate :
1/1/1998 12:00:00 AM
Abstract :
An analytical model of multiple quantum-well photodetectors (QWIP´s) is proposed and used to evaluate their high-frequency performance. The model accounts for the electron photoexcitation from the QW´s, capture into them and drift of the photoexcited electrons across the barriers. The frequency-dependent responsivity and the gain-bandwidth efficiency are derived as functions of the QWIP parameters. It is shown that the responsivity roll-off and 3 dB bandwidth are determined by the electron transit-time and capture effects, so that the main factors limiting the QWIP high-frequency performance are the number of the QW´s and the rate of the electron capture into them. It is predicted that the gain-bandwidth efficiency weakly depends on the number of the QW´s and capture parameter
Keywords :
electron traps; infrared detectors; photodetectors; semiconductor device models; semiconductor quantum wells; 3 dB bandwidth; QWIP; capture effects; electron capture; electron photoexcitation; frequency-dependent responsivity; gain-bandwidth efficiency; multiple quantum-well infrared photodetectors; photoexcited electrons; responsivity roll-off; transit-time effects; Analytical models; Bandwidth; Detectors; Electron emission; Frequency modulation; Photoconductivity; Photodetectors; Quantum well devices; Radioactive decay; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on