Title :
Experimental Demonstration of Current Mirrors Based on Silicon Nanowire Transistors for Inversion and Subthreshold Operations
Author :
Ru Huang ; Jibin Zou ; Runsheng Wang ; Chunhui Fan ; Yujie Ai ; Jing Zhuge ; Yangyuan Wang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
In this brief, the silicon nanowire transistor (SNWT)-based circuits of current mirrors (NWCMs) have been successfully fabricated for the first time. The key figures of merit of current mirrors (CMs) are experimentally studied, including output voltage coefficient (OVC), output resistance, and dc matching error ε. The experimental results indicate that, due to the unique quasi-1-D transport properties of the SNWTs, NWCMs exhibit superior performance than planar metal-oxide-semiconductor-field-effect-transistor-based CMs (PCMs) in the inversion operation region. Furthermore, NWCMs operating in the subthreshold region shows even better performance than PCMs. With the inherent advantages of the gate-all-around structure, the SNWT is very promising for analog and mixed-signal integrated circuits and particularly has its unique potential at subthreshold operation for low-power applications.
Keywords :
analogue circuits; current mirrors; field effect transistors; mixed analogue-digital integrated circuits; nanowires; DC matching error; current mirror; inversion operation; low power application; output resistance; output voltage coefficient; silicon nanowire transistor; subthreshold operation; CMOS integrated circuits; Logic gates; MOSFETs; Nanoscale devices; Phase change materials; Silicon; Analog and mixed-signal application; current mirror (CM); silicon nanowire transistor (SNWT); subthreshold operation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2162519