DocumentCode :
1307539
Title :
Photosensitive field emitters including a-Si:H p-i-n photodetection region
Author :
Sawada, Kazuaki ; Matsumura, Nobuhisa ; Ando, Takao
Author_Institution :
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
Volume :
45
Issue :
1
fYear :
1998
fDate :
1/1/1998 12:00:00 AM
Firstpage :
321
Lastpage :
325
Abstract :
A new photosensitive field emitter termed “photosensitive floating field emitter” is proposed. The photosensitive field emitter was constructed using an n-type Si field emitter tip and an a-Si:H p-i-n photodiode film. A back incidence type photosensitive floating field emitter was fabricated by depositing intrinsic a-Si:H and p-type a-SiC:H film on the back of n-type cone-shaped Si emitter array. The emission current as a function of the illumination intensity was measured and the operation of the photosensitive floating field emitter was described. The possibility of a photosensitive device with more than unit effective quantum efficiency was confirmed using an equivalent circuit for the photosensitive field emitter, which is composed of cone-shaped field emitters (n-type Si) and an avalanche photodiode. It is observed that the emission current exceeds the unit quantum efficiency
Keywords :
amorphous semiconductors; avalanche photodiodes; electron field emission; elemental semiconductors; equivalent circuits; hydrogen; p-i-n photodiodes; photocathodes; photodetectors; silicon; vacuum microelectronics; Si; Si:H; a-Si:H p-i-n photodiode film; avalanche photodiode; back incidence; emission current; equivalent circuit; n-type cone-shaped Si field emitter array; photodetection; photosensitive floating field emitter; quantum efficiency; Cathodes; Current measurement; Dark current; Electron emission; Field emitter arrays; Lighting; PIN photodiodes; Semiconductor films; Silicon; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.658848
Filename :
658848
Link To Document :
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