A new approach for SPICE simulation of AlGaAs/GaAs HBT subjected to burn-in test

Author

Sheu, S. ; Liou, J.J. ; Huang, C.I.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA

Volume

45

Issue

1

fYear

1998

fDate

1/1/1998 12:00:00 AM

Firstpage

326

Lastpage

329

Abstract

A new approach for extracting the parameters of the AlGaAs/GaAs heterojunction bipolar transistor (HBT) subjected to the electrical/thermal stress test (i.e., burn-in test) is presented. Such an approach is implemented into SPICE, thus allowing the simulations of the performance of post-burn-in HBT circuits. Steady-state, frequency, and transient responses of an HBT differential amplifier are simulated using the present HBT SPICE model. Results simulated from a two-dimensional (2-D) device simulator are also included in support of the model

Keywords

III-V semiconductors; SPICE; aluminium compounds; bipolar analogue integrated circuits; circuit analysis computing; differential amplifiers; frequency response; gallium arsenide; heterojunction bipolar transistors; integrated circuit modelling; semiconductor device models; semiconductor device testing; transient response; AlGaAs-GaAs; AlGaAs/GaAs HBT; Gummel-Poon model; HBT differential amplifier; SPICE simulation; burn-in test; electrical/thermal stress test; frequency response; parameter extraction; performance simulation; post-burn-in HBT circuits; steady-state response; transient response; two-dimensional device simulator; Circuit simulation; Circuit testing; Differential amplifiers; Frequency; Gallium arsenide; Heterojunction bipolar transistors; SPICE; Steady-state; Thermal stresses; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.658849

Filename

658849