Title :
IGBT with shallow emitter ballast
Author :
Venkatesan, V. ; Fragale, W. ; Zuniga, V. ; Shifeng Lu
Author_Institution :
Semicond. Products Sector, Motorola Inc., Mesa, AZ
fDate :
1/1/1998 12:00:00 AM
Abstract :
Two approaches of forming IGBTs with shallow emitter ballast have been investigated in this study. These designs are compared in terms of their layout scheme, fabrication steps and device performance. This shallow emitter ballast provides the necessary trade-off between on-state and ruggedness of IGBTs. Using this concept 600 V IGBTs with an on-voltage of ~1.6 V@100 A/cm2, turn-off energy of ~30 μJ/A, short-circuit time of ~27 μs, and a maximum UIS energy of ~13.4 mJ/A have been fabricated
Keywords :
insulated gate bipolar transistors; ion implantation; photolithography; power semiconductor switches; semiconductor device testing; short-circuit currents; 1.6 V; 27 mus; 600 V; IGBT; device performance; double implanted emitter; emitter injection efficiency; fabrication steps; layout scheme; maximum UIS energy; on-voltage; photoresist step; ruggedness; shallow emitter ballast; short-circuit time; turn-off energy; Bipolar transistors; Circuit simulation; Electronic ballasts; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Insulated gate bipolar transistors; Medical simulation; SPICE; Steady-state;
Journal_Title :
Electron Devices, IEEE Transactions on
