Title :
A model for thermal growth of ultrathin silicon dioxide in O2 ambient: a rate equation approach
Author :
Gorantla, Suresh ; Muthuvenkatraman, S. ; Venkat, Rama
Author_Institution :
Dept. of Electr. & Comput. Eng., Nevada Univ., Las Vegas, NV, USA
fDate :
1/1/1998 12:00:00 AM
Abstract :
A new thermal oxidation model based on a rate equation approach with concentration dependent diffusion coefficient is proposed for ultrathin SiO2 for thicknesses of the order of 100 Å. The oxidation reaction of silicon is assumed to be dependent on the concentrations of unreacted silicon and oxygen. The results of oxide thickness versus oxidation time for various growth conditions and activation energies for diffusion coefficients are in agreement with various experimental data for O2 ambient
Keywords :
diffusion; elemental semiconductors; oxidation; reaction kinetics theory; semiconductor process modelling; silicon; silicon compounds; 100 angstrom; O2; O2 ambient; Si; Si-SiO2; activation energies; concentration dependent diffusion coefficient; growth conditions; oxidation reaction; oxidation time; oxide thickness; rate equation approach; thermal oxidation model; ultrathin SiO2 films; Amorphous materials; Atomic layer deposition; Atomic measurements; Chemical processes; Equations; Kinetic theory; Lattices; Oxidation; Physics; Silicon compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
