• DocumentCode
    1307573
  • Title

    A model for thermal growth of ultrathin silicon dioxide in O2 ambient: a rate equation approach

  • Author

    Gorantla, Suresh ; Muthuvenkatraman, S. ; Venkat, Rama

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nevada Univ., Las Vegas, NV, USA
  • Volume
    45
  • Issue
    1
  • fYear
    1998
  • fDate
    1/1/1998 12:00:00 AM
  • Firstpage
    336
  • Lastpage
    338
  • Abstract
    A new thermal oxidation model based on a rate equation approach with concentration dependent diffusion coefficient is proposed for ultrathin SiO2 for thicknesses of the order of 100 Å. The oxidation reaction of silicon is assumed to be dependent on the concentrations of unreacted silicon and oxygen. The results of oxide thickness versus oxidation time for various growth conditions and activation energies for diffusion coefficients are in agreement with various experimental data for O2 ambient
  • Keywords
    diffusion; elemental semiconductors; oxidation; reaction kinetics theory; semiconductor process modelling; silicon; silicon compounds; 100 angstrom; O2; O2 ambient; Si; Si-SiO2; activation energies; concentration dependent diffusion coefficient; growth conditions; oxidation reaction; oxidation time; oxide thickness; rate equation approach; thermal oxidation model; ultrathin SiO2 films; Amorphous materials; Atomic layer deposition; Atomic measurements; Chemical processes; Equations; Kinetic theory; Lattices; Oxidation; Physics; Silicon compounds;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.658853
  • Filename
    658853
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1307573