Kink-free characteristics of AlSb/InAs high electron mobility transistors with planar Si doping beneath the channel

Author

Zhao, Y. ; Jurkovic, M.J. ; Wang, W.I.

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

Volume

45

Issue

1

fYear

1998

fDate

1/1/1998 12:00:00 AM

Firstpage

341

Lastpage

342

Abstract

AlSb/InAs n-channel inverted-structure high electron mobility transistors (i-HEMT´s) are realized by incorporating a Si doping sheet into a thin InAs layer that is embedded within the lower AlSb barrier. i-HEMT´s with a 1 μm ×25 μm gate size exhibit kink-free operation at room temperature with high drain current, high extrinsic transconductance, and low gate leakage. Results indicate potential for use in high-speed applications

Keywords

III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; leakage currents; semiconductor doping; two-dimensional electron gas; 1 mum; 25 mum; 2DEG density; AlSb-InAs:Si; AlSb/InAs n-channel inverted-structure high electron mobility transistors; Si doping sheet; extrinsic transconductance; gate leakage; gate size; high drain current; high-speed applications; kink-free characteristics; modulation doping; planar Si doping; room temperature; thin InAs layer; Doping; Electron mobility; Epitaxial layers; HEMTs; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Tellurium; Temperature; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.658855

Filename

658855