Title :
Quantitative model of radiation induced charge trapping in SiO2
Author :
Conley, J.F., Jr. ; Lenahan, P.M. ; Wallace, B.D. ; Cole, P.
Author_Institution :
Dept. of Commercial Syst., Dynamics Res. Corp., Beaverton, OR, USA
fDate :
12/1/1997 12:00:00 AM
Abstract :
A predictive model of radiation induced oxide charging, thermodynamics and electron spin resonance measurements of defects known as E´ centers, has been developed. The model is successfully tested on 60Co irradiated MOSFETs
Keywords :
EPR spectroscopy; MOSFET; gamma-ray effects; hole traps; insulating thin films; semiconductor device models; E´ centers; SiO2; electron spin resonance measurements; irradiated MOSFETs; oxide charging; predictive model; quantitative model; radiation induced charge trapping; thermodynamics; Atomic measurements; Charge carrier processes; Electron traps; Energy states; Entropy; Lattices; Paramagnetic resonance; Solids; Temperature dependence; Thermodynamics;
Journal_Title :
Nuclear Science, IEEE Transactions on
