Title :
A study of charge trapping in PECVD PTEOS films
Author :
Lenahan, Patrick M. ; Billman, Curtis A. ; Fuller, Robert ; Evans, Howard ; Speece, William H. ; Decrosta, David ; Lowry, Robert
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
fDate :
12/1/1997 12:00:00 AM
Abstract :
We have studied charge trapping in tetraethylorthosilicate (TEOS) based phosphorous doped silicon glass (PSG) films deposited by plasma enhanced chemical vapor deposition (PECVD) using electron spin resonance and capacitance voltage measurements. The results indicate that these films trap electrons and holes very well. The charges appear to be trapped in phosphorus and carbon related centers as well as in E´ centers. The carbon related centers are unique to the TEOS films
Keywords :
electron traps; hole traps; insulating thin films; paramagnetic resonance; phosphosilicate glasses; plasma CVD coatings; E´ center; P2O5-SiO2; PECVD PTEOS film; PSG; capacitance voltage measurement; charge trapping; electron spin resonance; electron trap; hole trap; phosphorous doped silicon glass; plasma enhanced chemical vapor deposition; tetraethylorthosilicate; Capacitance measurement; Capacitance-voltage characteristics; Chemical vapor deposition; Electron traps; Glass; Paramagnetic resonance; Plasma chemistry; Plasma measurements; Semiconductor films; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
