A study of charge trapping in PECVD PTEOS films

Author

Lenahan, Patrick M. ; Billman, Curtis A. ; Fuller, Robert ; Evans, Howard ; Speece, William H. ; Decrosta, David ; Lowry, Robert

Author_Institution

Pennsylvania State Univ., University Park, PA, USA

Volume

44

Issue

6

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

1834

Lastpage

1839

Abstract

We have studied charge trapping in tetraethylorthosilicate (TEOS) based phosphorous doped silicon glass (PSG) films deposited by plasma enhanced chemical vapor deposition (PECVD) using electron spin resonance and capacitance voltage measurements. The results indicate that these films trap electrons and holes very well. The charges appear to be trapped in phosphorus and carbon related centers as well as in E´ centers. The carbon related centers are unique to the TEOS films

Keywords

electron traps; hole traps; insulating thin films; paramagnetic resonance; phosphosilicate glasses; plasma CVD coatings; E´ center; P2O5-SiO2; PECVD PTEOS film; PSG; capacitance voltage measurement; charge trapping; electron spin resonance; electron trap; hole trap; phosphorous doped silicon glass; plasma enhanced chemical vapor deposition; tetraethylorthosilicate; Capacitance measurement; Capacitance-voltage characteristics; Chemical vapor deposition; Electron traps; Glass; Paramagnetic resonance; Plasma chemistry; Plasma measurements; Semiconductor films; Silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.658950

Filename

658950