Title :
Millimeter-Wave SiGe HBT High Voltage/High Power Architecture Implementation
Author :
Farmer, Thomas J. ; Darwish, Ali ; Huebschman, Benjamin ; Viveiros, Edward ; Hung, H. Alfred ; Zaghloul, Mona E.
Author_Institution :
Nat. Res. Council Postdoctoral Res. Fellow, U.S. Army Res. Lab., Adelphi, MD, USA
Abstract :
This letter discusses the first implementation of the high voltage/high power (HiVP) architecture in silicon at millimeter-wave frequencies. Implemented in a commercial 0.12 μm SiGe HBT BiCMOS process, PSAT = 19.0 dBm with a PAE of 11.47% in an area of 0.21 mm2, have been measured at center frequency 30 GHz. This architecture provides a new tool for silicon designers to achieve high output power, customizable bias, and a way to minimize, if not eliminate, matching circuitry at millimeter-wave frequencies. Simulation, layout, fabrication, and measurement results are presented in this letter.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor materials; HBT BiCMOS process; SiGe; customizable bias; frequency 30 GHz; heterojunction bipolar transistor; high voltage-high power architecture implementation; millimeter-wave HBT; millimeter-wave frequencies; size 0.12 mum; Heterojunction bipolar transistors; Impedance; Millimeter wave transistors; Radio frequency; Silicon; Silicon germanium; Heterojunction bipolar transistor (HBT); SiGe; millimeter-wave; power amplifiers (PAs); silicon; silicon alloys;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2011.2164782
