Title :
The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices
Author :
Pershenkov, V.S. ; Maslov, V.B. ; Cherepko, S.V. ; Shvetzov-Shilovsky, I.N. ; Belyakov, V.V. ; Sogoyan, A.V. ; Rusanovsky, V.I. ; Ulimov, V.N. ; Emelianov, V.V. ; Nasibullin, V.S.
Author_Institution :
Moscow Eng. Phys. Inst., Russia
fDate :
12/1/1997 12:00:00 AM
Abstract :
It is shown that emitter-base junction bias is significant for low dose rate irradiation response of npn and pnp bipolar transistors. The effect is more pronounced for pnp transistor. Experimental results are explained in terms of fringing electric field model. The role of fringing field is confirmed by the radiation induced charge neutralization experiment. The experimental results on the effect of emitter junction bias on the elevated temperature high dose rate irradiation of bipolar devices and its application for low dose rate response simulation are discussed
Keywords :
X-ray effects; beta-ray effects; bipolar transistors; elevated temperature; emitter junction bias; fringing electric field model; low dose-rate radiation response; npn bipolar transistor; pnp bipolar transistor; radiation induced charge neutralization; simulation; BiCMOS integrated circuits; Bipolar transistors; Degradation; Instruments; MOS devices; Physics; Pins; Simulated annealing; Temperature measurement; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
