Title :
Novel optically excited resonant pressure sensor
Author :
Thornton, K.E.B. ; Uttamchandani, D. ; Culshaw, B.
Author_Institution :
Dept. of Electron. & Electr. Eng., Strathclyde Univ., UK
fDate :
5/12/1988 12:00:00 AM
Abstract :
A novel pressure sensitive microresonator structure has been fabricated by anisotropic etching of silicon. An intensity modulated laser beam is focused onto the resonator and generates transverse vibrations, which are detected using optical heterodyne interferometric techniques. The pressure and temperature dependence of the resonant frequency of this structure is reported
Keywords :
elemental semiconductors; etching; light interferometry; nonelectric sensing devices; pressure measurement; silicon; Si; anisotropic etching; intensity modulated laser beam; microresonator structure; optical heterodyne interferometric techniques; optically excited resonant pressure sensor; resonant frequency; temperature dependence; transverse vibrations;
Journal_Title :
Electronics Letters
