Title :
Strained-layer InGaAs/InAlAs multiple quantum wells for efficient optical waveguide modulation at 1.55 mu m
Author :
Bigan, E. ; Allovon, M. ; Carre, M. ; Carenco, A.
Author_Institution :
CNET, Lab. de Bagneux, France
fDate :
3/15/1990 12:00:00 AM
Abstract :
Strain is used to tailor the absorption edge of thick (100 AA) quantum wells. This allows efficient modulation at 1.55 mu m. An extinction ratio of 18 dB has been achieved by applying a reverse bias of 6 V to a 160 mu m long waveguide device.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; optical communication equipment; optical modulation; optical waveguides; semiconductor quantum wells; 1.55 micron; 160 micron; 6 V; III-V semiconductors; InGaAs-InAlAs strained layer multiple quantum wells; absorption edge; extinction ratio; optical waveguide modulation; quantum-confined Stark effect; reverse bias; waveguide device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900231
