Damage from proton irradiation of vertical-cavity surface-emitting lasers

Author

Paxton, Alan H. ; Carson, Richard F. ; Schöne, Harald ; Taylor, Edward W. ; Choquette, Kent D. ; Hou, Hong Q. ; Lear, Kevin L. ; Warren, Mial E.

Author_Institution

Phillips Lab., Kirtland AFB, NM, USA

Volume

44

Issue

6

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

1893

Lastpage

1897

Abstract

Damage resulting from irradiating oxide-confined vertical-cavity surface-emitting lasers became significant (threshold shift ≈20%, peak power degradation ≈20%) at fluence levels approaching 1×10 ¹³ protons/cm². The threshold current shifted to higher values, and the peak light output power decreased. Forward-current annealing led to partial recovery of the performance of two of the three lasers for which annealing was attempted. Recent results on proton-implanted devices are summarized in a table

Keywords

annealing; laser reliability; proton effects; semiconductor lasers; surface emitting lasers; fluence levels; forward-current annealing; oxide-confined vertical-cavity surface-emitting lasers; peak light output power; peak power degradation; proton irradiation; threshold shift; Annealing; Apertures; Gallium arsenide; Laboratories; Laser modes; Optical surface waves; Protons; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.658958

Filename

658958