Title :
200 MeV proton damage effects on multi-quantum well laser diodes
Author :
Zhao, U.F. ; Patwary, A.R. ; Schrimpf, R.D. ; Neifeld, M.A. ; Galloway, K.F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA
fDate :
12/1/1997 12:00:00 AM
Abstract :
200 MeV proton damage effects on multi-quantum well GaAs/GaAlAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60×10-15 cm2/p for different bias conditions and from 1.52 to 3.58×10-15 cm2 /p for different incident directions. A simple model, based on threshold current damage factor, is presented to quantify the degradation of optical power. Preliminary annealing effects are also presented. The annealing effects are greater for devices shorted during irradiation than for those biased at Ibias=35 mA
Keywords :
III-V semiconductors; aluminium compounds; annealing; gallium arsenide; proton effects; quantum well lasers; 200 MeV; GaAs-GaAlAs; annealing; bias; model; multi-quantum well laser diode; optical power degradation; proton damage; threshold current damage factor; Annealing; Degradation; Diode lasers; Low earth orbit satellites; Pins; Power system modeling; Protons; Quantum well devices; Quantum well lasers; Threshold current;
Journal_Title :
Nuclear Science, IEEE Transactions on
