DocumentCode
1307730
Title
Engineering model of MOS transistors for the 60-300 K temperature range
Author
Huang, C.-L. ; Gildenblat, G.S.
Author_Institution
Penn State Univ., University Park, PA, USA
Volume
26
Issue
6
fYear
1990
fDate
3/15/1990 12:00:00 AM
Firstpage
365
Lastpage
367
Abstract
The authors present the first engineering model of short-channel MOS transistors that is applicable to cryogenic CMOS. The new model incorporates the nonuniversal dependence of the effective channel mobility on the effective vertical field which is ignored in the room temperature device models. The proposed model is verified by comparison with experimental device characteristics obtained over a wide range of temperatures and channel lengths.
Keywords
cryogenics; insulated gate field effect transistors; semiconductor device models; 60 to 300 K; MOSFET model; channel lengths; cryogenic CMOS; effective channel mobility; effective vertical field; engineering model; experimental device characteristics; low temperature range; nonuniversal dependence; short-channel MOS transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900238
Filename
82668
Link To Document