Implementation of total dose effects in the bipolar junction transistor Gummel-Poon model

Author

Montagner, X. ; Fouillat, P. ; Briand, R. ; Schrimpf, R.D. ; Touboul, A. ; Galloway, K.F. ; Calvet, M.C. ; Calvel, P.

Author_Institution

Lab. IXL, Bordeaux I Univ., Talence, France

Volume

44

Issue

6

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

1922

Lastpage

1929

Abstract

The effects of total dose on the SPICE model of bipolar junction transistors are investigated. The limitations of the standard Gummel-Poon model for simulating the radiation-induced excess base current are analyzed, and a new model based on an empirical approach is proposed. Four new SPICE rad-parameters are presented, and investigated for different dose rates. The relevant parameters are extracted using a new algorithmic procedure, combining a genetic approach and the standard optimization technique which minimizes the RMS error between measured and simulated excess base current. It is shown that the excess base current is accurately described by the same formula whatever the device type is. An empirical fitting of the rad-parameters as a function of total dose is proposed to use in hardening electronic circuits for space-like environments

Keywords

SPICE; bipolar transistors; genetic algorithms; radiation hardening (electronics); semiconductor device models; Gummel-Poon model; RMS error minimization; SPICE rad-parameters; bipolar junction transistor; electronic circuit hardening; genetic algorithm; optimization; radiation-induced excess base current; simulation; space environment; total dose effect; Analytical models; Bipolar transistors; Circuit simulation; Degradation; Electronic circuits; Microwave transistors; Performance analysis; Performance evaluation; Radio frequency; SPICE;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.658963

Filename

658963