Charge pumping analysis of radiation effects in LOCOS parasitic transistors

Author

Flament, O. ; Autran, J.L. ; Paillet, P. ; Roche, P. ; Faynot, O. ; Truche, R.

Author_Institution

CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France

Volume

44

Issue

6

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

1930

Lastpage

1938

Abstract

We have performed current-voltage and charge pumping measurements on LOCOS parasitic transistors submitted to X-ray irradiation. The electrical behavior and the charge pumping response of these non-planar structures have been analyzed by two-dimensional computer simulations. We report how this experimental approach allows us to obtain quantitative information about oxide charge and interface trap densities in different parts of the complete structure. Our results show a maximum of oxide charge trapping and interface trap buildup in the bird´s beak regions after irradiation. The generation of radiation-induced interface and border traps along the LOCOS SiO₂/Si interface is discussed, in terms of trap density and frequency response

Keywords

MOSFET; X-ray effects; electron traps; interface states; isolation technology; oxidation; LOCOS parasitic transistor; SiO₂-Si; X-ray irradiation; bird´s beak; border traps; charge pumping analysis; current-voltage measurement; electrical characteristics; frequency response; interface trap density; nonplanar structure; oxide charge trapping; two-dimensional computer simulation; CMOS technology; Charge measurement; Charge pumps; Current measurement; Leakage current; MOSFETs; Oxidation; Performance evaluation; Radiation effects; Silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.658964

Filename

658964