Title :
Isothermal and isochronal annealing methodology to study post-irradiation temperature activated phenomena
Author :
Chabrerie, C. ; Autran, J.L. ; Paillet, P. ; Flament, O. ; Leray, J.L. ; Boudenot, J.C.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
fDate :
12/1/1997 12:00:00 AM
Abstract :
In this work, the evolution of the oxide trapped charge has been modeled, to predict post-irradiation behavior for arbitrary anneal conditions (i.e. arbitrary temperature-time profiles). Using experimental data obtained from a single isochronal anneal, the method consists of calculating the evolution of the energy distribution of the oxide trapped charge, in the framework of a thermally activated charge detrapping model. This methodology is illustrated in this paper by the prediction of experimental isothermal data from isochronal measurements. The implications of these results to hardness assurance test methods are discussed
Keywords :
MIS devices; annealing; electron traps; radiation hardening (electronics); semiconductor device testing; MOS device; energy distribution; hardness assurance test; isochronal annealing; isothermal annealing; oxide trapped charge; post-irradiation temperature activated phenomena; thermally activated charge detrapping model; Acceleration; Annealing; Electronic equipment testing; Interface states; Isothermal processes; Predictive models; Qualifications; System testing; Temperature dependence; Temperature distribution;
Journal_Title :
Nuclear Science, IEEE Transactions on