DocumentCode :
1308179
Title :
Gallium arsenide MBE structure comprising mixer diodes and FETs for monolithic millimetre-wave receivers
Author :
Archer, J.A.
Author_Institution :
Varian Associates Inc., Santa Carla, CA, USA
Volume :
26
Issue :
6
fYear :
1990
fDate :
3/15/1990 12:00:00 AM
Firstpage :
384
Lastpage :
385
Abstract :
The formation of millimetre-wave GaAs mixer diodes and 0.5 mu m gate FETs on the same wafer has been demonstrated using a three-layer MBE structure. The diodes have a measured cut-off frequency of 780 GHz and the FETs typically exhibit fmax greater than 50 GHz. This technology is suitable for the implementation of monolithic microwave and millimetre-wave receivers.
Keywords :
III-V semiconductors; MMIC; Schottky-barrier diodes; field effect integrated circuits; gallium arsenide; mixers (circuits); molecular beam epitaxial growth; receivers; 0.5 micron; 50 GHz; 780 GHz; EHF; FETs; GaAs; III-V semiconductors; MIMIC; MM-wave ICs; MMIC; Schottky diodes; microwave receivers; mixer diodes; monolithic millimetre-wave receivers; submicron gate devices; three-layer MBE structure;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900250
Filename :
82680
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1308179
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