DocumentCode
1308375
Title
Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage
Author
Fukano, H. ; Kozen, A. ; Kato, Kazuhiko ; Nakajima, O.
Author_Institution
NTT Opto-Electron. Labs., Kanagawa
Volume
32
Issue
25
fYear
1996
fDate
12/5/1996 12:00:00 AM
Firstpage
2346
Lastpage
2348
Abstract
The authors propose a novel edge-illuminated refraction-facet photodiode (RFPD), where the incident light parallel to the upside surface is refracted at an angled facet and absorbed in a thin absorption layer. Fabricated RFPDs with an absorption layer thickness of 1.5 μm show a responsivity as high as 0.96 A/W even at a bias voltage of 0.5 V for a flat-ended singlemode fibre
Keywords
integrated optics; photodiodes; 0.5 V; 1.5 mum; absorption layer thickness; angled facet; bias voltage; edge-illuminated refracting-facet photodiode; flat-ended singlemode fibre; high responsivity; low-operation voltage; planar lightwave circuit; thin absorption layer;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961590
Filename
555970
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