• DocumentCode
    1308381
  • Title

    Au/In/Pd/Te/Pd ohmic contact to n-GaSb

  • Author

    Yang, Z.C. ; Hao, P.H. ; Wang, L.C.

  • Author_Institution
    Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
  • Volume
    32
  • Issue
    25
  • fYear
    1996
  • fDate
    12/5/1996 12:00:00 AM
  • Firstpage
    2348
  • Lastpage
    2349
  • Abstract
    An Au/In/Pd/Te/Pd ohmic contact scheme has been developed to n-GaSb (n≃1018 cm-3). Annealed at 250 and 400°C, this contact scheme exhibits excellent electrical properties (contact resistivity <10-6 Ω-cm2) and good thermal stability. The surface and interface morphologies were investigated using a scanning electron microscope (SEM). The ohmic contact formation mechanism is also proposed
  • Keywords
    III-V semiconductors; annealing; contact resistance; gallium compounds; gold; indium; interface structure; ohmic contacts; palladium; scanning electron microscopy; semiconductor device metallisation; semiconductor-metal boundaries; surface structure; tellurium; thermal stability; 250 C; 400 C; Au-In-Pd-Te-Pd-GaSb; Au/In/Pd/Te/Pd ohmic contact; GaSb; annealing; contact resistivity; electrical properties; interface morphology; n-GaSb; ohmic contact formation mechanism; scanning electron microscope; surface morphology; thermal stability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961589
  • Filename
    555971
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1308381