مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

1308381

Title :

Au/In/Pd/Te/Pd ohmic contact to n-GaSb

Author :

Yang, Z.C. ; Hao, P.H. ; Wang, L.C.

Author_Institution :

Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA

Volume :

Issue :

fYear :

1996

fDate :

12/5/1996 12:00:00 AM

Firstpage :

2348

Lastpage :

2349

Abstract :

An Au/In/Pd/Te/Pd ohmic contact scheme has been developed to n-GaSb (n≃10¹⁸ cm^-3). Annealed at 250 and 400°C, this contact scheme exhibits excellent electrical properties (contact resistivity <10^-6 Ω-cm²) and good thermal stability. The surface and interface morphologies were investigated using a scanning electron microscope (SEM). The ohmic contact formation mechanism is also proposed

Keywords :

III-V semiconductors; annealing; contact resistance; gallium compounds; gold; indium; interface structure; ohmic contacts; palladium; scanning electron microscopy; semiconductor device metallisation; semiconductor-metal boundaries; surface structure; tellurium; thermal stability; 250 C; 400 C; Au-In-Pd-Te-Pd-GaSb; Au/In/Pd/Te/Pd ohmic contact; GaSb; annealing; contact resistivity; electrical properties; interface morphology; n-GaSb; ohmic contact formation mechanism; scanning electron microscope; surface morphology; thermal stability;

fLanguage :

English

Journal_Title :

Electronics Letters

Publisher :

iet

ISSN :

0013-5194

Type :

jour

DOI :

10.1049/el:19961589

Filename :

555971

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1308381