Title :
Substrate engineering analysis of δ-doped Si0.8Ge 0.2 p-MOSFET transistors
fDate :
12/5/1996 12:00:00 AM
Abstract :
The effects of substrate engineering for δ-doped SiGe p-MOSFETs are analysed using a 3D device simulator, DAVINCI. The device uses the placement of an intrinsic buffer layer as well as an n+ control layer underneath the δ-doped layer in order to adjust the device characteristics. Results of the simulation showed that the devices have higher current driving capability compared to the conventional silicon p-MOSFETs. The electrical characteristics of the device were effectively controlled by varying the doping level and the thickness of either the buffer layer or the control layer
Keywords :
Ge-Si alloys; MOSFET; semiconductor device models; semiconductor doping; semiconductor materials; substrates; δ-doped Si0.8Ge0.2 p-MOSFET transistor; 3D device simulation; DAVINCI; Si0.8Ge0.2; buffer layer; control layer; current driving; electrical characteristics; substrate engineering;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961572
