Title :
Turn-key, liquid-nitrogen-cooled 3.9 μm semiconductor laser package with 0.2 W CW output
Author :
Le, H.Q. ; Turner, G.W. ; Ochoa, J.R.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
fDate :
12/5/1996 12:00:00 AM
Abstract :
A CW 3.9 μm diode-pumped InAsSb/GaSb laser yielded 0.2 W at 84 K and 0.26 W at ~68 K in a collimated beam, limited only by the pump power. The beam exhibited 62% coupling efficiency into a 250 μm core, 0.2 NA infrared fibre
Keywords :
semiconductor device packaging; semiconductor lasers; 0.2 W; 0.26 W; 3.9 micron; 62 percent; 68 K; 84 K; CW semiconductor laser; collimated beam; coupling efficiency; diode pumping; infrared fibre; liquid nitrogen cooling; turn-key package;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961556
